Type Designator: J113
Offer J113 Fairchild Semiconductor from Kynix Semiconductor Hong Kong Limited.IC Chips JFET N-CH 35V 625MW TO92. The J113 from Fairchild is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. Source and drain are interchangeable Gate to source breakdown voltage of 35V.
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.4 W
Maximum Drain-Source Voltage |Vds|: 35 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3 pF
Maximum Drain-Source On-State Resistance (Rds): 30 Ohm
Package: TO92
J113 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J113 Datasheet (PDF)
0.1. j111 j112 j113 cnv.pdf Size:31K _philips
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
0.4. ssm3j113tu.pdf Size:133K _toshiba
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V driveUnit: mm Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) 2.10.1Ron = 249m (max) (@VGS = -2.5 V) 1.70.1Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-
0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi
J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D
0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay
J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111
0.8. 2sj113.pdf Size:43K _hitachi
Datasheet: IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, J111, J112, IRFP250, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294, JANSR2N7395.
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
J113 Fet Datasheet
J113 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: J113
Тип транзистора: JFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.4 W
Предельно допустимое напряжение сток-исток |Uds|: 35 V
Максимально допустимый постоянный ток стока |Id|: 0.05 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 3 pf
Сопротивление сток-исток открытого транзистора (Rds): 30 Ohm
Тип корпуса: TO92
J113 Datasheet (PDF)
0.1. j111 j112 j113 cnv.pdf Size:31K _philips
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
0.4. ssm3j113tu.pdf Size:133K _toshiba
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V driveUnit: mm Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) 2.10.1Ron = 249m (max) (@VGS = -2.5 V) 1.70.1Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-
0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi
J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D
0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay
J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111
0.8. 2sj113.pdf Size:43K _hitachi
Другие MOSFET... IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, J111, J112, IRFP250, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294, JANSR2N7395.
J113 Fet
Список транзисторов
J113 Transistor
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02J113 Fet Datasheet