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Using GaN technology for EV: Nexperia & Ricardo Panel Talk In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. CCPAK Power GaN FETs As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality, high-robustness SMD packaging to it’s GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Using GaN technology for EV: Nexperia & Ricardo Panel Talk In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Os x yosemite upgrade to sierra. Circuit design and PCB layout recommendations for GaN FET half bridges In Nexperia’s two-die GaN FET the freewheeling current does indeed flow in the body diode of a silicon MOSFET, but because the silicon MOSFET is a low voltage part, the injected charge is very small. Indicated in Fig. 2 are the current paths for three modes of operation. Nexperia has announced a partnership with Ricardo to produce a technology demonstrator for an EV inverter based on gallium nitride (GaN) technology GaN is the preferred switch for these applications as GaN FETs lead to systems with greater efficiencies at lower costs with improved thermal performance and simpler switching topologies.
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